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| March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features -1.5 A, -30 V, RDS(ON) = 0.125 @ VGS = -10 V RDS(ON) = 0.20 @ VGS = - 4.5 V. High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D 8 35 S G S SuperSOT -3 TM G Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG RJA RJC Parameter Drain-Source Voltage Gate-Source Voltage TA = 25oC unless other wise noted FDN358P -30 20 -1.5 -5 (Note 1a) (Note 1b) Units V V A Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation 0.5 0.46 -55 to 150 W Operating and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 C/W C/W (c) 1998 Fairchild Semiconductor Corporation FDN358P Rev.D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25 oC VDS = -24 V, VGS = 0 V TJ = 55C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) -30 -28 -1 -10 100 -100 V mV/ oC A A nA nA BVDSS/TJ IDSS VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25 oC VGS = -10 V, ID = -1.5 A TJ =125C VGS = -4.5 V, ID = -1.2 A -1 -1.5 3 0.11 0.15 0.175 -5 7 ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance -2 V mV/ oC VGS(th)/TJ RDS(ON) 0.125 0.21 0.2 ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD Note: On-State Drain Current Forward Transconductance VGS = -4.5 V, VDS = -5 V VDS = -10 V, ID = -1.5 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz A S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) 270 150 45 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 8 7 17 10 16 14 27 1.8 9.1 ns ns ns ns nC nC nC VDS = -5 V, ID = -1.5 A, VGS = -10 V 6.5 1 1.1 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) -0.42 -0.74 -1.2 A V 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the design while RCA is determined by the user's board design. Typical RJA using the board layouts shown below on FR-4 PCB in a still air environment : drain pins. RJC is guaranteed by a. 250oC/W when mounted on 0.02 in2 pad of 2oz Cu. a b. 270oC/W when mounted on a 0.001 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDN358P Rev.D Typical Electrical Characteristics 10 2.5 -I D , DRAIN-SOURCE CURRENT (A) VGS = -10V -6.0 8 -5.0 RDS(ON) , NORMALIZED -4.5 -4.0 DRAIN-SOURCE ON-RESISTANCE 2 VGS = -4.0V -4.5 6 4 -3.5 1.5 -5.0 -6.0 -7.0 -8.0 -10 0 2 4 6 8 10 2 -3.0 1 0 0 1 -V DS 2 3 4 5 , DRAIN-SOURCE VOLTAGE (V) -I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate 1.6 0.5 R DS(on) , ON-RESISTANCE (OHM) DRAIN-SOURCE ON-RESISTANCE 1.4 ID = -1.5A V GS = -10V ID = 0.75A 0.4 R DS(ON) , NORMALIZED 1.2 0.3 1 0.2 TA = 125C 0.8 0.1 TA = 25C 0.6 -50 0 -25 0 J 25 50 75 100 125 150 2 4 6 8 10 T , JUNCTION TEMPERATURE (C) -VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VDS = -5V -ID , DRAIN CURRENT (A) 8 T = -55C A 25C 125C -IS , REVERSE DRAIN CURRENT (A) 10 10 VGS = 0V T = 125C J 25C -55C 1 6 0.1 4 0.01 2 0.001 0 1 2 -V GS 3 4 5 6 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 , GATE TO SOURCE VOLTAGE (V) -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN358P Rev.D Typical Electrical Characteristics 10 -V GS , GATE-SOURCE VOLTAGE (V) 700 I D = -1.5A 8 VDS = -5V -15V -10V CAPACITANCE (pF) 400 Ciss 200 6 Coss 100 4 50 2 20 0.1 f = 1 MHz V GS = 0 V 0 2 4 Q g , GATE CHARGE (nC) 6 8 0.2 0.5 1 2 5 10 C rss 0 30 -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 5 -I D , DRAIN CURRENT (A) 2 1 0.5 N) S(O RD IT LIM 50 1m s 10m s 40 POWER (W) 10 SINGLE PULSE R JA =250 C/W TA = 25C 0m s 30 0.1 0.05 VGS = -10V SINGLE PULSE RJA = 250C/W TA = 25C A 0.2 0.5 1 2 5 DC 1s 10s 20 10 0.01 0.1 10 30 50 0 0.0001 0.001 0.01 0.1 1 10 100 300 - VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R JA (t) = r(t) * RJA R JA = 250 C/W t1 t2 TJ - TA = P * RJA (t) Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. FDN358P Rev.D |
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